Product details description
CoolSiC™ MOSFETs in discrete housings come along with a fast internal freewheeling diode, thus making hard switching without additional
diode chips possible. Due to its unipolar character, the MOSFETs show very low, temperature-independent switching and low conduction losses,
especially under partial load conditions.
Our unique silicon carbide (SiC) CoolSiC™ MOSFET discrete products from 650 V up to 2000 V are ideally suited for hard- and resonant-switching
topologies such as LLC and ZVS, and can be driven like an IGBT or CoolMOS™, using standard drivers. These robust devices offer superior gate
oxide reliability enabled by state-of-the-art trench design, best-in-class switching and conduction losses, highest transconductance level
(gain), threshold voltage of Vth = 4 V and short-circuit robustness.
